the information in this document is subject to change without notice. before using this document, please confirm that this is the latest version. not all devices/types available in every country. please check with local nec representative for availability and additional information. ? 1999, 2000 mos field effect transistor 2sK3405 switching n-channel power mos fet industrial use document no. d14639ej2v0ds00 (2nd edition) date published april 2001 ns cp(k) printed in japan data sheet description the 2sK3405 is n-channel mos fet device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as dc/dc converter with synchronous rectifier. features ? 4.5-v drive available ? low on-state resistance r ds(on)1 = 9.0 m ? max. (v gs = 10 v, i d = 24 a) ? low gate charge q g = 34 nc typ. (i d = 48 a, v dd = 16 v, v gs = 10 v) ? built-in gate protection diode ? surface mount device available absolute maximum ratings (t a = 25 c ) drain to source voltage (v gs = 0 v) v dss 20 v gate to source voltage (v ds = 0 v) v gss 20 v drain current (dc) (t c = 25c) i d(dc) 48 a drain current (pulse) note i d(pulse) 192 a total power dissipation (t a = 25c) p t1 1.5 w total power dissipation (t c = 25c) p t2 50 w channel temperature t ch 150 c storage temperature t stg ? 55 to +150 c note pw 10 s, duty cycle 1% ordering information part number package 2sK3405 to-220ab 2sK3405-zk to-263(mp-25zk) 2sK3405-zj to-263(mp-25zj) the mark shows major revised points.
data sheet d14639ej2v0ds 2 2sK3405 electrical characteristics(t a = 25c) characteristics symbol test conditions min. typ. max. unit drain leakage current i dss v ds = 20 v, v gs = 0 v 10 a gate leakage current i gss v gs = 20 v, v ds = 0 v 10 a gate cut-off voltage v gs(off) v ds = 10 v, i d = 1 ma 1.5 2.5 v forward transfer admittance | y fs |v ds = 10 v, i d = 24 a 12.5 s drain to source on-state resistance r ds(on)1 v gs = 10 v, i d = 24 a 6.5 9.0 m ? r ds(on)2 v gs = 4.5 v, i d = 24 a 9.9 14.0 m ? input capacitance c iss 1800 pf output capacitance c oss 770 pf reverse transfer capacitance c rss v ds = 10 v v gs = 0 v f = 1 mhz 400 pf turn-on delay time t d(on) 21 ns rise time t r 13 ns turn-off delay time t d(off) 64 ns fall time t f v dd = 10 v , i d = 24 a v gs(on) = 10 v r g = 10 ? 25 ns total gate charge q g 34 nc gate to source charge q gs 6.6 nc gate to drain charge q gd v dd = 16 v v gs = 10 v i d = 48 a 11 nc diode forward voltage v f(s-d) i f = 48 a, v gs = 0 v 1.0 v reverse recovery time t rr 38 ns reverse recovery charge q rr i f = 48 a, v gs = 0 v di/dt = 100 a/ s 29 nc test circuit 2 gate charge test circuit 1 switching time pg. r g 0 v gs d.u.t. r l v dd = 1 s duty cycle 1 % v gs wave form v ds wave form v gs 10 % 90 % 10 % 0 v ds 90 % t d(on) t r t d(off) t f 0 t on t off pg. 50 ? d.u.t. r l v dd i g = 2 ma
data sheet d14639ej2v0ds 3 2sK3405 typical characteristics (t a = 25 c) drain current vs. drain to source voltage v ds - drain to source voltage - v i d - drain current - a 0 0 2 3 100 200 150 1 pulsed v gs =10 v 50 7.0 v 4.5 v forward transfer characteristics v gs - gate to source voltage - v i d - drain current - a pulsed 123 4 56 v ds = 10 v 10 1 0.1 100 1000 t ch = ? 50 ?c ? 25 ?c 25 ?c 75 ?c 150 ?c gate to source cut-off voltage vs. channel temperature t ch - channel temperature - ? c v gs(off) - gate to source cut-off voltage - v v ds = 10 v i d = 1 ma 1.0 1.5 0.5 2.0 2.5 3.0 ? 50 0 50 100 150 0 | y fs | - forward transfer admittance - s forward transfer admittance vs. drain current i d - drain current - a pulsed v ds = 10 v 10 1 100 0.1 0.01 0.1 1 10 100 t ch = 150 ? c 75 ? c 25 ? c ? 25 ? c ? 50 ? c drain to source on-state resistance vs. gate to source voltage v gs - gate to source voltage - v r ds(on) - drain to source on-state resistance - m ? 0 0 10 51520 15 20 5 10 pulsed i d = 48 a 24 a 10 a drain to source on-state resistance vs. drain current i d - drain current - a r ds(on) - drain to source on-state resistance - m ? 10 10 1 0.1 20 30 1000 100 pulsed 0 v gs = 10 v 7.0 v 4.5 v
data sheet d14639ej2v0ds 4 2sK3405 drain to source on-state resistance vs. channel temperature t ch - channel temperature - ? c r ds(on) - drain to source on-state resistance - m ? 0 ? 50 4 2 0 50 100 150 8 6 16 18 12 14 10 7.0 v 10 v v gs = 4.5 v source to drain diode forward voltage 1 i sd - diode forward current - a 0 1.5 v sd - source to drain voltage - v 0.5 pulsed 0.1 0.01 1 10 100 1000 0 v 4.5 v v gs = 10 v reverse recovery time vs. diode forward current i sd - diode forward current - a t rr - reverse recovery time - ns di/dt = 100 a/ s v gs = 0 v 1 0.1 10 1 10 100 1000 100 dynamic input/output characteristics v gs - gate to source voltage - v q g - gate charge - nc v ds - drain to source voltage - v 0 0 10 20 30 40 6 3 9 12 15 18 4 0 8 v dd = 16 v 10 v 4 v v ds 12 v gs i d = 48 a capacitance vs. drain to source voltage v ds - drain to source voltage - v c iss , c oss , c rss - capacitance - pf 0.1 100 1000 10000 1 10 100 v gs = 0 v f = 1 mhz c oss c rss c iss switching characteristics i d - drain current - a t d(on) , t r , t d(off) , t f - switching time - ns 10 1 1 0.1 100 1000 10 100 t f t r t d(on) t d(off) v dd = 10 v v gs = 10 v r g = 10 ?
data sheet d14639ej2v0ds 5 2sK3405 pw - pulse width - sec transient thermal resistance vs. pulse width r th(t) - transient thermal resistance - ?c /w 10 0.01 0.1 1 100 1000 1 m 10 m 100 m 1 10 100 1000 single pulse 10 100 r th(ch-c) = 2.5 ?c /w r th(ch-a) = 83.3 ?c /w derating factor of forward bias safe operating area t ch - channel temperature - ?c dt - percentage of rated power - % 040 20 60 100 140 80 120 160 0 20 40 60 80 100 t c - case temperature - ? c p t - total power dissipation - w 0 0 80 20 40 60 100 140 120 160 total power dissipation vs. case temperature 10 20 30 40 60 50 70 forward bias safe operating area 1 10 100 i d - drain current - a 0.1 v ds - drain to source voltage - v 100 1000 10 1 power dissipation limited 100 s 10 ms 300 s 1 ms 3 ms pw = 10 s dc i d(dc) i d(pulse) t c = 25 ? c single pulse r ds(on) limited (@v gs = 10 v)
data sheet d14639ej2v0ds 6 2sK3405 package drawings (unit: mm) 1)to-220ab (mp-25) 2)to-263 (mp-25zk) 3)to-263 (mp-25zj) equivalent circuit remark the diode connected between the gate and source of the transistor serves as a protector against esd. when this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. 4.8 max. 1.gate 2.drain 3.source 4.fin (drain) 1 2 3 10.6 max. 10.0 3.60.2 4 3.00.3 1.30.2 0.750.1 2.54 typ. 2.54 typ. 5.9 min. 6.0 max. 15.5 max. 12.7 min. 1.30.2 0.50.2 2.80.2 source body diode gate protection diode gate drain 10.00.2 8.0 typ. 2.54 0.70.15 9.150.2 2.450.25 15.250.5 1.350.3 123 4 2.5 4.450.2 1.30.2 0.50.2 0 to 8 o 1.gate 2.drain 3.source 4.fin (drain) 0.4 no plating 8.4 typ. 0.025 to 0.25 0.25 (10) 1.40.2 1.00.5 2.54 typ. 2.54 typ. 8.50.2 123 5.70.4 4 2.80.2 4.8 max. 1.30.2 0.50.2 (0.5r) (0.8r) 1.gate 2.drain 3.source 4.fin (drain) 0.70.2
data sheet d14639ej2v0ds 7 2sK3405 [memo]
2sK3405 m8e 00. 4 the information in this document is current as of april, 2001. the information is subject to change without notice. for actual design-in, refer to the latest publications of nec's data sheets or data books, etc., for the most up-to-date specifications of nec semiconductor products. not all products and/or types are available in every country. please check with an nec sales representative for availability and additional information. no part of this document may be copied or reproduced in any form or by any means without prior written consent of nec. nec assumes no responsibility for any errors that may appear in this document. nec does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of nec semiconductor products listed in this document or any other liability arising from the use of such products. no license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of nec or others. descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. the incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. nec assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. while nec endeavours to enhance the quality, reliability and safety of nec semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. to minimize risks of damage to property or injury (including death) to persons arising from defects in nec semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. nec semiconductor products are classified into the following three quality grades: "standard", "special" and "specific". the "specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. the recommended applications of a semiconductor product depend on its quality grade, as indicated below. customers must check the quality grade of each semiconductor product before using it in a pa rticular application. "standard": computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "special": transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "specific": aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. the quality grade of nec semiconductor products is "standard" unless otherwise expressly specified in nec's data sheets or data books, etc. if customers wish to use nec semiconductor products in applications not intended by nec, they must contact an nec sales representative in advance to determine nec's willingness to support a given application. (note) (1) "nec" as used in this statement means nec corporation and also includes its majority-owned subsidiaries. (2) "nec semiconductor products" means any semiconductor product developed or manufactured by or for nec (as defined above). ? ? ? ? ? ?
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